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| 别名 | 缓冲HF |
|---|---|
| 英文名称 | Buffered oxide etchant (BOE) 6:1 |
| 产品介绍 |
描述 缓冲氧化物蚀刻剂（BOE）是一种用于微细加工的液体腐蚀剂。它的主要用途是蚀刻二氧化硅（SiO2）或氮化硅（Si3N4）的薄膜。它是氟化铵（NH4F）和氢氟酸（HF）等缓冲液的混合物。浓缩的 HF 蚀刻二氧化硅的速度太快，不能很好地进行工艺控制，同时也会剥落用于光刻图案化的光刻胶。BOE 6:1 is 6 parts by volume 40% ammonium fluoride and 1 part by volume 49% HF. 应用 缓冲氧化物蚀刻剂（BOE）6：1可用于栅极光刻（gate photolithography）的AlGaN / GaN基高电子迁移率晶体管的氧化物去除。它可用于缓冲氧化物蚀刻剂法，制造微型生物芯片。 储存条件：勿存放于玻璃器皿。Description Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.Buffered oxide etchant (BOE) 6:1 can be used in the oxide removal of AlGaN/GaN-based high electron mobility transistors for gate photolithography. It can be used in a buffer oxide etchant method for the fabrication of micro biochip. |
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