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| 英文名称 | Aluminum Etchant Type A |
|---|---|
| 产品介绍 |
描述 铝附件-A 型适用于硅器件和其他微电子应用的标准铝蚀刻剂。铝蚀刻剂是稳定、无毒的制剂，用于蚀刻硅器件和集成电路应用中的铝金属化层。定义了铝触点，并形成了互连。这些具有独特性能的铝蚀刻剂可以轻松克服在铝蚀刻过程中的许多困难。利用光刻技术对铝进行金属化和蚀刻是半导体和微电子技术的基础。铝蚀刻剂与市售的光致抗蚀剂高度相容，并可以形成高分辨率的图案。金属线宽为 1 mil，间距小于 5 微米是可行的。这些铝蚀刻剂可以实现高分辨率，因为不会发生光刻胶图案的剥离，并且底切极小。此外， 应用 将高达 25,000? 的铝金属镀层真空沉积在硅片上，涂上光致抗蚀剂，然后使用适当的光掩膜对其进行 UV 曝光。该抗蚀剂是开发来保护需要互联的铝。然后，用铝蚀刻剂蚀刻去除铝的未保护区域，然后用水冲洗。蚀刻时间取决于蚀刻剂温度和铝膜厚度。当蚀刻较厚的铝膜时，需要较高的蚀刻速率；因此应采用更高的蚀刻剂温度。同样，对于较薄的铝膜，需要较低的蚀刻速率，则应该选择较低的蚀刻剂温度。在特定的蚀刻剂温度下，蚀刻时间由以下公式给出：蚀刻时间（秒）+膜厚（?）/蚀刻速率（?/秒）在 25°C 下蚀刻速率为 30?/秒；在 40°C 下 80?/秒 Description ALUMINUM ETCHANT - TYPE AStandard aluminum etchant for use on silicon devices and other microelectronic applications.Aluminum etchants are stable, non-toxic preparations used to etch aluminum metallizations on silicon devices and in integrated circuit applications. Aluminum contacts are defined, and interconnections are formed. These aluminum etchants, formulated with unique properties, easily overcome many of the difficulties experienced in aluminum etch processes.The aluminum metallization and etching process using photo-lithographic techniques is basic to semiconductor and microelectronic technology. Aluminum etchants are highly compatible with commercial photoresists and permit delineation into high resolution patterns. Metal line width of 1 mil and separations less than 5 microns are feasible. High resolution is practical with these aluminum etchants because lifting of photoresist patterns does not occur and undercutting is minimized. Furthermore, the etchants do not attack silicon, silicon dioxide, silicon nitride or nichrome resistor films.Two aluminum etchants are offered for use in microelectronics. Type A is recommended for use on silicon devices. Type D is recommended for use on gallium arsenide and gallium phosphide devices to avoid attack of the etchant on the intermetallic compound. It is also recommended for etching aluminum metallizations on nichrome thin film resistors.Aluminum metallizations up to 25,000 ? are vacuum deposited on the silicon slice, coated with a photoresist, and UV exposed using an appropriate photographic mask. The resist is developed to protect the aluminum where interconnections are desired. Then the unprotected areas of the aluminum are removed by etching with the aluminum etchant, followed by a water rinse.Etching time is dependent upon the etchant temperature and the aluminum film thickness. When etching thick aluminum films, a higher etch rate is required; thus a higher etchant temperature should be used. Likewise, for thinner aluminum films, slower etch rates are desired and a lower etchant temperature should be chosen.At a specific etchant temperature, the etching time is given by the following formula:Etching time (second) + Film Thickness (?)/ Etch Rate (?/sec)where Etch Rate at 25°C 30 ?/sec; at 40°C 80 ?/sec. |
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